Patents

P27. Wenjuan Zhu, Jialun Liu, Hojoon Ryu, “Classifier circuits with graphene transistors” U.S. Patent No. US11239320, Granted, Feb. 1st, 2022

P26. Wenjuan Zhu, Jialun Liu, Kai Xu, Zijing Zhao “Transistors with switchable polarity and non-volatile configurations” U.S. Patent No. US11527648B2, Granted, Dec. 13th, 2022

P25. Wenjuan Zhu, Shang-Chun Lu, and Mohamed Mohamed, “Vertical hetero- and homo-junction tunnel field-effect transistors”, U.S. Patent 10236386, Filed on December 15th, 2017, Granted on March 19th, 2019

P24. Hongbo Peng, Gustavo A. Stolovitzky, Wenjuan Zhu, “Graphene transistor gated by charges through a nanopore for bio-molecular sensing and DNA sequencing”, U.S. Patent US 9765392 B2, Granted on September 19th, 2017

P23. Wenjuan Zhu, “Heterojunction Nanopore for sequencing”, US 9377431 B2, Granted on June 28th, 2016.

P22. Christos D. Dimitrakopoulos, Damon B. Farmer, Alfred Grill, Yu-Ming Lin, Deborah A. Neumayer, Dirk Pfeiffer, Wenjuan Zhu, “Semiconductor structure having a double layer gate dielectric having a low equivalent oxide thickness graphene semiconductor devices and a method”, German Patent DE102012222116B4, Granted on August 25th, 2016,

P21. Wenjuan Zhu, “Heterojunction Nanopore for sequencing” (method), US 9377432 B2, Granted on June 28th, 2016.

P20. Wenjuan Zhu, “Nano units formed with hinged graph membrane”, German Patent DE102013200214B4, Granted on Oct. 29th, 2015

P19. Christos D. Dimitrakopoulos, Alfred Grill, Deborah A. Neumayer, Dirk Pfeiffer, Wenjuan Zhu, Damon B. Farmer, Yu-Ming Lin, “Bilayer gate dielectric including silicon nitride and hafnium oxide continuously covering graphene layer in semiconductor structure”, G.B. Patent GB2499311A, Granted on Dec. 17th, 2014

P18. Wenjuan Zhu, Yanqing Wu, Jin Cai, “Graphene pressure sensors”, U.S. Patent US 8852985 B2, Granted on Oct. 7th, 2014

P17. Wenjuan Zhu, Yanqing Wu, Phaedon Avouris, “Graphene Devices and Semiconductor Field Effect Transistors in 3D Hybrid Integrated Circuits”, U.S. Patent US 8,748,871 B2, Granted on June 10th, 2014

P16. Wenjuan Zhu, “Graphene-based efuse device” (method), U.S. Patent US 8,735,242 B2, Granted on May 27th, 2014

P15. Christos D. Dimitrakopoulos, Damon B. Farmer, Alfred Grill, Yu-Ming Lin, Deborah A. Neumayer, Dirk Pfeiffer, Wenjuan Zhu, “Bilayer gate dielectric with low equivalent oxide thickness for graphene devices”, U.S. Patent US 8,680,511 B2, Granted on March 25th, 2014

P14. Wenjuan Zhu, “Graphene-based efuse device”, U.S. Patent 8,598,634 B1, 2012, Granted on Dec. 3rd, 2013.

P13. Wenjuan Zhu, “Nano-devices formed with suspended graphene membrane” (method), U.S. Patent US8569089B2, Granted on Oct. 29th, 2013.

P12. Wenjuan Zhu, “Graphene-based non-volatile memory” (method), U.S. Patent 8,557,686 B1, Granted on Oct. 15th, 2013

P11. Wenjuan Zhu, “Nano-devices formed with suspended graphene membrane” (structure), U.S. Patent US8564027B2, Granted on Oct. 22th, 2013

P10. Wenjuan Zhu, Deborah A Neumayer, Phaedon Avouris, “Nitride gate dielectric for graphene MOSFET”, U.S. Patent US 8,530,886 B2, Granted on September 10th, 2013

P9. Wenjuan Zhu, “Graphene-based non-volatile memory” (structure), U.S. Patent US8519450 B1, Granted on Aug. 27th, 2013.

P8. Wenjuan Zhu, “Structure and method of forming buried-channel graphene field effect device”, U.S. Patent US8101474B2, Granted on January 24th, 2012

P7. Huilong Zhu, Wenjuan Zhu, Zhijiong Luo, “Forming silicided gate and contacts from polysilicon germanium and structure formed”, U.S. Patent US7718513 B2, Granted on May 18th, 2010

P6. Huilong Zhu, Ravikumar Ramachandran, Effendi Leobandung, Mahender Kumar, Wenjuan Zhu, Christine Norris, “Semiconductor structure and manufacturing method thereof”, China Patent CN100568531C, Granted on December 9th, 2009.

P5. Wenjuan Zhu, Michael P. Chudzik, Oleg Gluschenkov, Dae-Gyu Park, Akihisa Sekiguchi, “Semiconductor structure”, China Patent CN100550422C, Granted on October 14th, 2009

P4. Huilong Zhu, Mahender Kumar, Dan M. Mocuta, Ravikumar Ramachandran, Wenjuan Zhu, “Structure and method for manufacturing device with ultra-thin SOI at the tip of a V-shape channel”, U.S. Patent 7528027 B1, Granted on May 5th, 2009

P3. Wenjuan Zhu, Michael P. Chudzik, Oleg Gluschenkov, Dae-Gyu Park, Akihisa Sekiguchi, “Method of forming an ultra-thin HfSiO metal silicate film for high performance CMOS applications and semiconductor structure formed in said method”, U.S. Patent 7504700 B2, Granted on March 17th, 2009

P2. Huilong Zhu, Ravikumar Ramachandran, Effendi Leobandung, Mahender Kumar, Wenjuan Zhu, Christine Norris, “Field effect device including inverted V shaped channel re-gion and method for fabrication thereof”, U.S. Patent US7485510B2, Granted on February 3rd, 2009

P1. Xiaoning Hu, Lixue Kang, Wenjuan Zhu,“Flat vacuum sample chamber capable of simultaneously measuring light transmission and photoelectric response characteristic”, China Patent CN2351756Y, Granted on December 1st, 1999